α-氧化铁介孔纳米材料的制备及其在锂/钠离子电池中的电化学性能

采用硬模板法合成了具有六方排列的平行圆柱形有序孔道介孔α-氧化铁(α-Fe_2O_3),并将其用作锂离子、钠离子电池的负极材料。所制备的介孔α-Fe_2O_3凭借其独特的有序介孔结构,有效缓解电极在充放电过程中的体积效应,提高了电解液浸润性,促进锂/钠离子的转移和传输,从而在锂离子及钠离子电池中均表现出优异的电化学性能。作为锂离子电池负极时,其首圈放电比容量为983.9 mAh·g~(-1)。经过100次循环后,其放电比容量为1 188.0 mAh·g~(-1)。在钠离子电池中,其首圈放电比容量为687.7mAh·g~(-1)。经过50次循环后,仍有316.9 mAh·g~(-1)的放电比容量。     

BaCe0.7Zr0.2La0.1O3-α陶瓷的制备和导电性

以高温固相反应法合成了BaCe_0.7Zr_0.2La_0.1O_3-α陶瓷。粉末XRD结果表明,该陶瓷材料为单一钙钛矿型BaCeO₃斜方晶结构。以陶瓷材料为固体电解质、多孔性铂为电极,采用交流阻抗谱技术和气体浓差电池方法分别测定了材料在500～900 ℃下,干燥空气、湿润空气和湿润氢气中的电导率以及离子迁移数,研究了材料的离子导电特性。结果表明,在500～900 ℃下干燥空气中,陶瓷材料的最大电导率为1.8 mS·cm^-1,氧离子迁移数为0.14～0.04,是一个氧离子与电子空穴的混合导体。在湿润空气中,陶瓷材料的最大电导率为2.0 mS·cm^-1,质子迁移数为0.48～0,氧离子迁移数为0.25～0.10,是质子、氧离子和电子空穴的混合导体。在湿润氢气中,陶瓷材料的最大电导率为3.6 mS·cm^-1。在500～700 ℃温度范围内,陶瓷材料的质子迁移数为1,是纯的质子导体;而在800～900 ℃温度范围内,陶瓷材料的质子迁移数为0.93～0.91,是质子与电子的混合导体,质子电导占主导。     

Synthesis and crystal structure of an infinite double- stranded chain manganese(II) coordination polymer bridged through 1,2-bis(imidazol-1-yl)ethane ligand

The manganese complex [Mn(bim)₂(NCO)₂]_n (1) (bim = 1,2-bis(imidazol-1-yl)ethane) has been synthesized and structurally characterized by X-ray diffraction analysis. It crystallizes in the monoclinic space group C2/c, a = 9.896(3) Å, b = 15.383(4) Å, c = 13.949(4) Å, β = 98.966(5)^∘, V = 2097.5(9) ų, Z = 4. The coordination geometry of Mn(II) atom is distorted octahedral; it is coordinated equatorially by four nitrogen atoms from the imidazole rings of four symmetry-related bim ligands, and axially by two nitrogen atoms from two symmetry-related cyanate anions. The structure is polymeric, with 18-membered spiro-fused rings and each 18-membered ring involving two inversion-related bim molecules.     

关于仿紧空间的原象

本文利用ασ仿紧子集的概念,给出了在正则空间条件下,仿紧空间在连续闭映射下的原象是仿紧空间的一个充分条件．这一结果,统一推广了高国士教授与陈必胜教授在两篇论文中的结果．     

二能级原子与逆场算符耦合系统的J-C模型

利用表象变换方法,对含逆场算符的J-C模型,分别在相互作用表象中和薛定谔表象中求出了系统的演化波函数,并讨论了失谐量为零时的拉比振动.     

一种基于数字全息技术的盲音频水印算法

提出了一种基于数字全息技术的盲音频水印算法.水印图像经随机相位调制形成物光波,该物光波的傅里叶变换与参考光波发生干涉,形成傅里叶变换全息图.再利用离散余弦变换的能量压缩能力,通过量化算法把降维的水印,即傅里叶变换全息图嵌入音频信号中,在水印提取过程中不需要原始音频信号的参与.仿真实验表明,该算法对低通滤波、噪音干扰特别是剪裁具有一定的稳健性.     

用能量法求多自由度振动系统的角频率

利用简谐振动能量方程，通过分析振幅矢量的关系，用能量法求多自由度振动系统的角频率或简正振动频率。     

Initial study on the structure and photoluminescence properties of SiC films doped with Al

SiC films doped with aluminum (Al) were prepared by the rf-magnetron sputtering technique on p-Si substrates with a composite target of a single crystalline SiC containing several Al pieces on the surface. The as-deposited films were annealed in the temperature range of 400-800 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The results show that the introduction of Al into films hinders crystalline formation process. And with the increase of annealing temperature, more Si particles are formed in the films, which strongly affect the optical absorption properties. The photoluminescence (PL) spectra of the samples show two peaks at 370 nm and 412 nm. The intensities of the PL peaks are evidently improved after Al doped. We attribute the origin of the two PL peaks to a kind of Si-related defect centres. The obtained results are expected to have important applications in modern optoelectronic devices.     

The structure and optical properties of SiC film on Si (111) substrate with a ZnO buffer layer by RF-magnetron sputtering technique

We have fabricated a multiply layer SiC/ZnO on Si substrates using the RF-magnetron sputtering technique with the targets of a single crystalline SiC and a polycrystalline ZnO. The as-deposited films were annealed in the temperature range of 600–1000 °C under nitrogen ambient. We have observed a strong ultraviolet (UV) emission (370 nm) from the as-deposited SiC/ZnO film and an intense violet emission (412 nm) from the film annealed at high temperature (1000 °C) under nitrogen ambient. The SiC film quality and the PL intensities are considered to be strongly dependent on the crystalline quality of the ZnO buffer layer. With the increase of the annealing temperature, the crystalline quality of the ZnO buffer layer is improved, resulting in the improvement of the SiC film quality and the increase of the PL intensities. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM) to provide the evidences of photoluminescence (PL). We suggest that the UV emission could be attributed to the nanocrystal silicon particles, that the 395 nm band is related to ZnO buffer layer and has a great relation to the crystalline quality of the ZnO film, and that the violet emission is associated with the emission luminescence from 6H-SiC, which bears on the SiC film quality. The obtained results are expected to have important applications in modern optoelectronic devices.     

Augmented Spinor Space

In this paper, based on the Pauli matrices, a notion of augmented spinor space is introduced, and a uniqueness of such augmented spinor space of rank n is proved. It may be expected that this new notion of spaces can be used in mathematical physics and geometry.